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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2158-T2B-A is a small signal N-channel silicon metal-oxide semiconductor field-effect transistor manufactured by Renesas Electronics Corporation. It is designed for general-purpose switching and amplification applications in low-power circuits. The device features a single channel configuration with a maximum drain-source voltage rating of 50V and a continuous drain current capacity of 0.1A. Key electrical characteristics include a typical input capacitance of 6pF. The component is supplied in an embossed tape carrier format and is compliant with lead-free manufacturing standards, ensuring environmental safety and reliability for standard quality grade electronic assemblies.
Feature Summary
- N-channel silicon MOSFET construction for reliable small-signal operation
- Single-element design optimized for low-current switching tasks
- Lead-free compliant manufacturing process for environmental standards
Applications
- Low-power signal switching circuits
- Small-signal amplification stages
- General-purpose discrete semiconductor applications
Procurement Notes
Verify the specific suffix T2B-A to confirm the embossed tape packaging format and lead-free status. Ensure compatibility with standard quality grade requirements as defined by Renesas. Cross-reference the manufacturer product number with official distributor catalogs to confirm availability and authenticity before procurement.
Selection Notes
Select this component for applications requiring a 50V rated N-channel MOSFET with a 0.1A current limit. Consider the 6pF input capacitance for high-speed switching implications in low-power designs. Verify that the embossed tape packaging aligns with automated assembly equipment specifications.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the small-signal MOSFET category. It serves as a fundamental building block for analog and digital circuit designs where low-voltage, low-current switching is required. The product line emphasizes standard quality grades for broad industrial and consumer electronics integration.
Replacement Considerations
Consult official Renesas documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
