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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2158-T2B-AT is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for general-purpose switching applications in electronic circuits. The device features an N-channel silicon metal-oxide semiconductor structure with a single element configuration. Key electrical parameters include a drain-source voltage rating of 50V and a continuous drain current of 0.1A. The maximum on-resistance at 2.5V or 1.8V gate drive is specified as 20,000 milliohms. The component is housed in a compact MM package with dimensions of 3 x 3 x 1.4 mm.
Feature Summary
- N-channel silicon MOSFET construction for reliable switching performance
- Compact surface-mount packaging suitable for space-constrained designs
- Low voltage operation capability for small signal applications
Applications
- General purpose signal switching
- Small signal amplification circuits
- Low power consumer electronics
Procurement Notes
Verify the exact part number suffix to ensure compatibility with specific tape and reel requirements. Confirm that the MM package type matches your PCB footprint design. Check for any automotive qualification markings if the application requires industrial grade reliability standards. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.
Selection Notes
Select this component when a low-voltage N-channel switch is required for small signal currents up to 100mA. Consider the high on-resistance value which may impact efficiency in higher current scenarios. Evaluate the 50V breakdown voltage against circuit operating conditions. Compare package dimensions against available board space constraints before finalizing the design choice.
Part Context
This discrete semiconductor falls under Renesas' portfolio of small signal field-effect transistors. It serves as a fundamental building block for analog and digital switching circuits. The product line targets cost-sensitive consumer and industrial applications requiring reliable low-power switching solutions.
Replacement Considerations
Cross-reference with other 50V N-channel MOSFETs in SOT-323 or similar small packages. Verify pinout compatibility and thermal characteristics before substitution.
