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Product Detailed Parameters
- Description：NCH 10V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK2167-TD-E is a silicon N-channel MOSFET designed for very high-speed switching applications. It features a TO-220-3 through-hole package configuration. The component utilizes standard silicon technology and operates as a single-channel device. This part number represents the specific tape-and-reel variant of the 2SK2167 series, intended for automated surface mount or specialized through-hole processing workflows.
Feature Summary
- Engineered for very high-speed switching operations
- Utilizes silicon semiconductor technology
- Configured as a single N-channel device
Applications
- High-speed switching circuits
- Power management systems requiring rapid transition times
- Automated assembly electronic assemblies
Procurement Notes
Verify the exact datasheet specifications against the manufacturer's official documentation to confirm electrical parameters and thermal characteristics. Ensure the TD-E suffix aligns with required packaging formats for production lines. Cross-reference the component marking with the original Sanyo Semicon Device designations to guarantee authenticity and correct functional performance in critical high-speed applications.
Selection Notes
Select this component when high-speed switching performance is prioritized over low-frequency power handling. Consider the TO-220-3 package constraints regarding thermal dissipation and board space. Evaluate the availability of the specific tape-and-reel format against existing manufacturing equipment capabilities. Compare alternative variants within the 2SK2167 family to determine if different packaging options better suit the specific assembly requirements.
Part Context
This component belongs to the broader 2SK2167 series originally developed by Sanyo Semicon Device. The series is characterized by its capability for very high-speed switching applications. The 2SK2167-TD-E specifically denotes the version supplied in tape-and-reel packaging, distinguishing it from tube-packaged equivalents while maintaining identical electrical performance characteristics defined by the core device architecture.
Replacement Considerations
Direct substitutes include other 2SK2167 variants such as the 2SK2167 in tube packaging, provided the application supports manual or bulk insertion. Verify that any replacement maintains the same N-channel polarity and silicon technology. Confirm that the thermal resistance and pinout compatibility match the existing circuit design before implementing any cross-brand alternatives.
