2SK2266(TE24R,Q)

Description：MOSFET N-CH 60V 45A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:e5460b100db8 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 45A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

2SK2266(TE24R,Q)

Overview

The Toshiba 2SK2266(TE24R,Q) is a silicon N-channel MOSFET utilizing L²-π-MOSV technology, designed for chopper regulators, DC–DC converters, and motor drives. It features a 60 V drain-source voltage rating and supports a continuous drain current of 45 A at 25°C. The device offers a typical on-resistance of 22 mΩ at VGS = 10 V and ID = 25 A, with a forward transfer admittance of 27 S. Key electrical parameters include a gate threshold voltage range of 0.8 to 2.0 V, a maximum gate leakage current of ±10 μA, and a total gate charge of 60 nC. Thermal resistance from channel to case is 1.92 °C/W.

Feature Summary

Utilizes L²-π-MOSV technology for enhanced performance in power switching applications
Supports 4-V gate drive capability for flexible logic interfacing
Features low drain-source ON resistance to minimize conduction losses
Provides high forward transfer admittance for improved switching efficiency

Applications

Chopper Regulators
DC–DC Converters
Motor Drive Circuits

Procurement Notes

Verify the specific ordering suffix (e.g., TE24R, Q) against official Toshiba documentation to confirm packaging type and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributor, as markings may vary by production lot. Ensure the component meets the required thermal and electrical specifications for the intended application before finalizing procurement.

Selection Notes

Select this component for applications requiring a 60 V N-channel MOSFET with high current handling capabilities up to 45 A. Consider the 22 mΩ typical on-resistance for efficiency optimization in low-voltage, high-current environments. Verify that the 4-V gate drive requirement aligns with the system's control logic levels. Evaluate the thermal management requirements based on the 1.92 °C/W channel-to-case thermal resistance.

Part Context

The 2SK2266 belongs to Toshiba's discrete semiconductor product line, specifically within the category of Silicon N-Channel MOS Type Field Effect Transistors. Manufactured using L²-π-MOSV technology, it is engineered for general electronics applications such as computers, office equipment, and industrial robots. The device is distinct from automotive-grade or specialized high-reliability variants unless explicitly certified.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba Semiconductor and Storage technical support or authorized distributors for verified cross-reference data and equivalent components.