2SK2299N

$0.75

Description：MOSFET N-CH 450V 7A TO220FN
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:fee07570a0ce Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 7A TO220FN
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FN
Package / Case：TO-220-3 Full Pack

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2SK2299N

Overview

The 2SK2299N is a silicon N-channel MOSFET designed for switching applications. It features a 450V drain-source voltage rating and a continuous drain current of 7A. The device offers low on-resistance, fast switching speed, and a wide safe operating area (SOA). The gate-source voltage is guaranteed to be ±30V, facilitating easy drive circuit design and parallel operation.

Feature Summary

Low on-resistance
Fast switching speed
Wide SOA (safe operating area)
Gate-source voltage (VGSS) guaranteed to be ±30V

Applications

Audio visual equipment
Office-automation equipment
Communications devices
Electrical appliances
Electronic toys

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the application environment remains within the absolute maximum ratings defined in the specification sheet. Ensure compliance with export control regulations if applicable to the region of manufacture or distribution.

Selection Notes

Select this component for general-purpose switching circuits requiring high voltage isolation and moderate current handling. The guaranteed ±30V gate-source voltage allows for flexible driver interface options. Consider thermal management requirements due to power dissipation during switching operations.

Part Context

This component belongs to ROHM Semiconductor's transistor lineup, specifically categorized under switching transistors. It utilizes a silicon N-channel structure suitable for standard electronic equipment. The product is intended for ordinary electronic devices rather than high-reliability safety-critical systems without prior consultation.

Replacement Considerations

Consult the manufacturer for confirmed substitute part numbers. Do not assume cross-compatibility based solely on package type or generic specifications.