2SK2376(Q)

Description：MOSFET N-CH 60V 45A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:fe8fae119925 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 45A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FL
Package / Case：TO-220-3, Short Tab

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2SK2376(Q)

Overview

The Toshiba 2SK2376 is an N-channel silicon MOSFET utilizing L²-π-MOSV technology, designed for chopper regulators, DC-DC converters, and motor drives. It supports a 4-V gate drive with a typical drain-source ON resistance of 13 mΩ at VGS = 10 V and ID = 25 A. The device handles a continuous drain current of 45 A and a pulse current of 180 A. Key electrical ratings include a drain-source breakdown voltage of 60 V, a maximum channel temperature of 150 °C, and a single-pulse avalanche energy rating of 701 mJ.

Feature Summary

L²-π-MOSV process enables low on-resistance and high forward transfer admittance
Optimized for direct 4-V logic gate drive applications
High avalanche energy capability for robust switching performance

Applications

Chopper regulator circuits
DC-DC converter designs
Motor drive systems

Procurement Notes

Verify the specific ordering suffix to confirm RoHS compliance status, as indicated by lot number markings. Confirm package type availability (JEDEC or Toshiba standard) matches board layout requirements. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy load conditions. Ensure electrostatic discharge precautions are implemented during handling due to device sensitivity.

Selection Notes

Select this component for applications requiring low conduction losses at moderate voltages. The 60 V rating suits 48 V bus architectures. Evaluate thermal management needs based on the 1.25 °C/W junction-to-case resistance. Verify that the 4-V threshold range aligns with the available control logic levels. Consider the internal diode reverse recovery characteristics for synchronous rectification topologies.

Part Context

This part belongs to Toshiba's general-purpose power MOSFET lineup manufactured using the L²-π-MOSV epitaxial process. It is distinct from signal-level transistors like the 2SC series or automotive-grade amplifiers such as the OPA series. The device is packaged in flange-mount configurations suitable for heatsink mounting.