2SK23800QL

Overview

The Panasonic 2SK2380QL is a silicon N-channel junction field-effect transistor (JFET) designed for low-frequency impedance conversion and infrared sensor applications. It utilizes an SS-mini type package to facilitate downsizing and automatic insertion. The device features low gate-to-source leakage current and small capacitance values, including input, output, and reverse transfer capacitances. Absolute maximum ratings include a drain current of ±1 mA, allowable power dissipation of 125 mW at 25°C ambient temperature, and a channel temperature limit of 125°C. The QL suffix indicates a specific IDSS rank classification.

Feature Summary

• Low gate-to-source leakage current
• Small capacitance characteristics
• Suitable for low-frequency impedance conversion
• Optimized for infrared sensor circuits

Applications

• Impedance conversion in low frequency circuits
• Infrared sensor signal processing

Procurement Notes

Verify the exact ordering suffix against official Panasonic documentation to confirm the specific IDSS rank classification associated with the 'QL' designation. Ensure that the component lifecycle status is checked via the manufacturer's website prior to procurement, as maintenance or discontinuation notices may affect long-term availability.

Selection Notes

Select this JFET when low leakage and minimal capacitance are critical for maintaining signal integrity in high-impedance nodes. Consider the absolute maximum ratings carefully, particularly the low drain current limit of ±1 mA, to ensure operation within safe boundaries. Verify thermal constraints given the 125 mW power dissipation rating in the specified package.

Part Context

The 2SK2380 series belongs to Panasonic's lineup of silicon junction FETs intended for small-signal applications. These devices are characterized by their ability to handle low-frequency signals with minimal noise and capacitance loading. The SS-mini package allows for compact circuit board layouts compared to larger through-hole alternatives.

Replacement Considerations

No official substitutes are listed in the provided datasheet. When evaluating alternative components, match the N-channel junction FET topology, low leakage specifications, and SS-mini package dimensions. Verify that replacement parts meet the required forward transfer admittance and capacitance limits for the specific application.