2SK2394-6-TB-E

Overview

The onsemi 2SK2394-6-TB-E is an N-channel JFET in a SC-59 (SOT-23-3) package. It features a drain-to-source voltage of 15 V and a continuous drain current of 50 mA. The device provides a forward transfer admittance ranging from 20 to 38 mS at 1 kHz, with a typical value of 38 mS. Input capacitance is typically 10 pF at 5 V. The cutoff voltage ranges from -0.3 V to -1.0 V, while the drain current spans 10 to 20 mA. Maximum power dissipation is 200 mW, and the junction temperature reaches 150 °C.

Feature Summary

• Ultralow noise figure for high-fidelity signal processing
• High forward transfer admittance for effective amplification
• Small-sized package enabling compact circuit designs

Applications

• AM tuner RF amplifier
• Low-noise amplifier

Procurement Notes

Verify the specific ordering suffix '-6-TB-E' against official documentation to confirm tape and reel specifications, including part orientation and tape sizes. Ensure compliance with RoHS standards as indicated by the Pb-Free designation. Confirm availability through authorized distributors or direct manufacturer channels.

Selection Notes

Select this component when low noise and high gain are required in a small form factor. Verify that the 15 V drain-to-source voltage and 50 mA current limits meet the application requirements. Consider the SC-59 package constraints for thermal management and PCB layout.

Part Context

This N-channel JFET belongs to onsemi's discrete transistor lineup designed for analog signal applications. It utilizes silicon technology and is housed in a surface-mount SC-59 package. The device is intended for use in circuits requiring minimal signal degradation and high input impedance.

Replacement Considerations

No official substitutes are listed in the provided datasheet. When evaluating alternatives, ensure compatibility with the 15 V voltage rating, 50 mA current limit, and SC-59 package dimensions. Verify that substitute devices offer comparable noise figures and forward transfer admittance.