2SK2394-7-FRD-TB-E

2SK2394-7-FRD-TB-E

  • Description:JFET N-CH SC-59-3
  • Series:-

SKU:6383d9b9e7b7 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:JFET N-CH SC-59-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Download product information

2SK2394-7-FRD-TB-E

Overview

The onsemi 2SK2394-7-FRD-TB-E is an N-channel Junction Field-Effect Transistor (JFET) designed for low-noise high-frequency amplifier applications. It features a drain-to-source voltage (Vdss) of 15 V and a maximum drain current (Id) of 50 mA. The device operates with a drain-source cutoff current (Idss) ranging from 6 to 32 mA at Vgs=0, with specific variants offering Idss between 16 and 32 mA. It exhibits a transconductance (Gfs) of 38 mS and supports a maximum operating temperature of +150 °C. Packaged in a surface-mount SC-59-3 (3-CP) configuration, it is supplied in tape and reel format for automated assembly.

Feature Summary

  • Optimized for low-noise performance in high-frequency signal amplification
  • Surface-mount construction suitable for compact electronic designs
  • High thermal stability supporting elevated operating temperatures

Applications

  • AM tuner RF amplifier circuits
  • Low-noise amplifier stages
  • High-frequency signal processing modules

Procurement Notes

Verify the specific Idss binning (6-32mA vs 16-32mA) required for your circuit design, as this parameter significantly impacts gain and noise characteristics. Confirm that the SC-59-3 package dimensions align with your PCB footprint constraints. Ensure the tape and reel packaging specification matches your pick-and-place equipment capabilities. Cross-reference the datasheet for precise electrical limits to prevent overstress during operation.

Selection Notes

Select this component when low noise figure is critical for RF front-end stages. Compare the 38 mS transconductance against alternative JFETs to ensure sufficient gain for your application. Consider the 15 V breakdown voltage to verify compatibility with your supply rails. Evaluate the thermal requirements against the +150 °C junction limit if operating in high-power environments.

Part Context

This part belongs to onsemi's JFET portfolio, specifically engineered for analog signal integrity. The 2SK2394 series provides a balance of low noise and moderate current handling. The -7-FRD suffix indicates specific manufacturing lot or binning codes within the standard 2SK2394 family, ensuring consistent electrical parameters for mass production.

Replacement Considerations

Direct substitutes include the 2SK2394-7-TB-E, which shares identical electrical specifications but may differ in packaging format. Verify pinout compatibility and thermal characteristics before substitution. Generic N-channel JFETs are not recommended due to potential variations in noise performance and transconductance.

2SK2394-7-FRD-TB-E2SK2394-7-FRD-TB-E

Click on the inquiry