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Product Detailed Parameters
- Description：NCH 10V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK2534-TL-E is a single N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) designed for power switching applications. It features a maximum drain-source breakdown voltage of 250 V and a continuous drain current rating of 16 A. The device exhibits a maximum on-resistance of 0.2 Ω, supporting efficient conduction with minimal power loss. It operates in enhancement mode and includes a built-in diode within its single-element configuration. The component is housed in a small outline plastic/epoxy package with three terminals, suitable for compact circuit designs requiring robust voltage handling capabilities.
Feature Summary
- N-channel enhancement mode operation for reliable switching control
- Integrated body diode for simplified circuit topology
- Low on-resistance for improved energy efficiency
- High voltage tolerance for demanding power environments
Applications
- Power supply switching circuits
- Motor drive systems
- Industrial power management modules
Procurement Notes
Verify the specific manufacturer origin, as sourcing data indicates both Sanyo and onsemi associations for this part number. Confirm RoHS compliance status through official material composition declarations before integration. Ensure the package type matches the design footprint requirements. Cross-reference the exact suffix specifications to guarantee functional equivalence with existing system designs.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current capacity is required. The 250 V rating suits applications exceeding standard low-voltage limits. Consider the 0.2 Ω on-resistance for thermal management needs. Verify that the small outline package fits the available board space. Ensure the built-in diode meets the circuit's freewheeling or protection requirements without additional components.
Part Context
This device belongs to the discrete semiconductor category, specifically within the power field-effect transistor segment. It represents a legacy designation often associated with Sanyo technology now managed by onsemi. The component serves as a fundamental building block for power electronics, providing essential switching functionality in various industrial and commercial electronic systems requiring durable and efficient voltage control.
Replacement Considerations
Check for direct substitutes within the same voltage and current class. Verify pinout compatibility if replacing in existing layouts. Ensure thermal characteristics align with the original design constraints.
