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Product Detailed Parameters
- Description：NCH J-FET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SK2539-6-TB-E is an N-channel junction silicon FET designed for high-frequency amplifier and analog switch applications. It utilizes the FBET process to achieve large forward transfer admittance (|Yfs|) and small input capacitance (Ciss). The device operates with a drain-to-source voltage of 50 V, a gate-to-source voltage of ±5 V, and a continuous drain current of 50 mA. Maximum power dissipation is rated at 200 mW. Electrical characteristics include a typical |Yfs| of 11 mS at 1 MHz and 19 mS at 4 MHz, with input capacitance of 4.9 pF and reverse transfer capacitance of 1.4 pF at 1 MHz.
Feature Summary
- High-frequency performance enabled by large forward transfer admittance and low input capacitance.
- Small-sized package design facilitates compact and slim equipment construction.
- Manufactured using the FBET process for optimized switching and amplification characteristics.
Applications
- High-frequency amplifier circuits
- Analog switch implementations
Procurement Notes
Verify the specific IDSS rank required for the application, as the 2SK2539 series is classified into ranks 6, 7, and 8 based on drain current specifications. Confirm that the marking code AK corresponds to the desired electrical bin. Ensure the ordering suffix matches the required packaging format for production integration.
Selection Notes
Select this component when low input capacitance and high-frequency gain are critical constraints. Verify that the 50 V drain-to-source voltage rating accommodates the maximum circuit operating conditions. Consider the thermal limitations imposed by the 200 mW power dissipation rating in the specified package.
Part Context
This part belongs to the 2SK2539 family of N-channel JFETs manufactured by onsemi. The base model supports high-frequency operations, while the -6-TB-E suffix indicates a specific manufacturing lot or packaging configuration. The device is distinct from power MOSFETs due to its JFET technology and low-current ratings.
Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, match the N-channel JFET topology, 50 V breakdown voltage, and SOT-23/CP package footprint. Verify that replacement devices offer comparable |Yfs| and Ciss values at the target operating frequency.
FAQ
How is the 2SK2539 device classified?
The 2SK2539 is classified by its drain current (IDSS) into ranks 6, 7, and 8.
What is the maximum gate-to-source voltage rating?
The absolute maximum rating for gate-to-source voltage is ±5 V.
What is the typical forward transfer admittance at 4 MHz?
The typical forward transfer admittance (|Yfs|) is 19 mS at 4 MHz with VDS = 5 V and VGS = 0 V.
