SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2SK2539-7-TB-E is an N-channel JFET housed in a 3-pin Case CP (SOT) package. It features a maximum drain-source voltage of 15V and a maximum continuous drain current of 50mA. The device supports a maximum drain-gate voltage of -15V, making it suitable for low-voltage precision signal applications requiring single configuration operation.
Verify the specific datasheet parameters for gate-source cutoff voltage and transconductance before integration. Confirm that the 3-pin Case CP package aligns with PCB footprint requirements. Ensure supply chain sources provide original manufacturer documentation to validate the N-channel JFET specifications and thermal characteristics for the intended operating environment.
Select this component when a single N-channel JFET with 15V breakdown voltage is required. It is appropriate for circuits needing 50mA continuous current capacity. Consider the SOT package constraints for space-limited designs. Validate that the -15V drain-gate rating meets the circuit's reverse bias requirements without exceeding absolute maximum ratings.
This part belongs to the onsemi JFET product line, categorized under discrete semiconductors and transistors. It serves as a fundamental active component for analog electronics, distinct from MOSFETs or logic gates within the same manufacturer portfolio. The device is designed for specific low-power, low-voltage roles rather than high-power switching.
Public confirmed substitute part numbers are not available in the provided source material.