2SK2596BXTL-E

2SK2596BXTL-E

$1.53
  • Description:MOSFET N-CH
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:d2676aaa114c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK2596BXTL-E

Overview

The 2SK2596BXTL-E is a silicon N-channel MOS FET designed for UHF power amplifier applications. Manufactured by Renesas Electronics Corporation, this component utilizes advanced MOS technology to deliver high-frequency performance suitable for radio frequency transmission systems. It operates as a discrete power device optimized for efficient signal amplification in the ultra-high frequency band.

Feature Summary

  • Silicon N-Channel MOS FET construction
  • Optimized for UHF power amplifier circuits
  • High-frequency RF signal amplification capability

Applications

  • UHF power amplifier stages
  • RF transmission modules
  • Wireless communication equipment

Procurement Notes

Verify the specific suffix and manufacturer details against current Renesas documentation, as legacy part numbers may have superseded versions or different packaging options. Confirm availability status directly with authorized distributors, as older RF components often face end-of-life transitions or limited stock constraints.

Selection Notes

Select this component when designing UHF band power amplifiers requiring an N-channel MOS FET topology. Ensure the circuit design accommodates the specific impedance matching and thermal management requirements typical of RF power devices from this manufacturer series.

Part Context

This device belongs to the family of discrete RF power transistors produced by Renesas. Similar parts in the lineup include the 2SK2595 and 2SK3390, which share the UHF power amplifier application focus but may differ in pinout, package style, or specific electrical ratings defined in their respective datasheets.

Replacement Considerations

The 2SK2596BX is listed as a similar part number within the same product family. Verify functional equivalence and pin compatibility before substitution.

2SK2596BXTL-E2SK2596BXTL-E
$1.53
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