2SK2623-E

$0.71

Description：NCH 15V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:3e044b578642 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 15V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK2623-E

Overview

The onsemi 2SK2623-E is an N-channel silicon MOSFET designed as a general-purpose switching device. It features a drain-to-source voltage rating of 600 V and a continuous drain current capacity of 1.5 A at 25°C, with a pulsed current capability of 6 A. The component exhibits a low static drain-to-source on-state resistance (RDS(on)) ranging from 4.2 to 5.5 Ω at VGS=15V. Key electrical characteristics include a total gate charge (Qg) of 8 nC, ensuring efficient switching performance. The device operates within a channel temperature range up to 150 °C and is housed in a compact surface-mount package.

Feature Summary

Low ON-resistance for improved efficiency
Low gate charge (Qg) for fast switching
High breakdown voltage capability

Applications

General-purpose switching applications
Home appliances
Audio/Visual equipment
Communication devices
Industrial equipment

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductor Co.,Ltd. as the producer. Confirm that the 'E' suffix corresponds to the specific tape-and-reel or bulk packaging variant documented in the official delivery specification. Ensure compliance with standard application guidelines, avoiding use in safety-critical systems without prior consultation.

Selection Notes

Select this component for circuits requiring high-voltage switching with moderate current handling. The 600V rating suits mains-connected or inductive load applications. Evaluate thermal management requirements based on the 1.0 W dissipation limit at 25°C case temperature. Consider the 4.2–5.5 Ω RDS(on) for conduction loss calculations in low-current designs.

Part Context

This N-channel MOSFET belongs to the family of general-purpose switching transistors intended for consumer and industrial electronics. Manufactured by SANYO Semiconductor, it serves as a robust solution for power control tasks where high voltage isolation and reliable switching are required. The device is not intended for aerospace, medical, or nuclear applications.

Replacement Considerations

Consult official substitution lists for equivalent N-channel MOSFETs with matching 600V ratings and similar pin configurations. Verify that any replacement maintains comparable RDS(on) and Qg specifications to ensure circuit performance integrity.