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Product Detailed Parameters
- Description：N-CHANNEL SILICON MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SK2624LS is an N-channel silicon MOSFET designed for general-purpose switching applications. It utilizes a single FET configuration housed in a surface-mount package suitable for automated assembly. The device provides reliable performance with optimized on-resistance characteristics, balancing conduction losses and thermal efficiency. It operates within standard industrial temperature ranges and complies with RoHS standards, ensuring environmental safety and regulatory adherence for modern electronic designs.
Feature Summary
- N-channel silicon construction for robust switching performance
- Optimized on-resistance for moderate current handling capabilities
- Surface-mount packaging facilitating automated PCB assembly
Applications
- General-purpose power switching circuits
- Moderate current load management systems
- Consumer electronics power stages
Procurement Notes
Verify the specific suffix or variant code against official datasheets to ensure exact electrical matching. Confirm RoHS compliance status directly with the manufacturer documentation. Check for any automotive qualification requirements if applicable to your design. Ensure the ordering part number matches the required package type and pin configuration precisely.
Selection Notes
Select this component when moderate current handling and low on-resistance are prioritized in N-channel applications. Evaluate thermal dissipation requirements based on the specific package constraints. Compare against alternative MOSFETs if higher voltage ratings or different switching speeds are necessary for the target circuit topology.
Part Context
This component belongs to onsemi's discrete semiconductor portfolio, specifically within the field-effect transistor category. It serves as a fundamental building block for power management and signal switching tasks. The product line emphasizes reliability and standardized packaging to support widespread integration across various electronic manufacturing sectors.
Replacement Considerations
Consult official substitution guides for compatible N-channel MOSFETs with similar RDS(on) and current ratings. Verify pinout compatibility before replacing to avoid circuit damage. Ensure voltage and thermal specifications meet or exceed original design parameters.
