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The 2SK2631-TL-E is an N-channel silicon MOSFET manufactured by Sanyo Semicon Device. It features a drain-source voltage of 800V and a continuous drain current of 1A. The device has a maximum power dissipation of 30W and a drain-source on-resistance of 10Ω. Designed for ultrahigh-speed switching applications, it utilizes a TO-92 package.
Verify the manufacturer status as the part may be obsolete or under new ownership such as onsemi. Confirm the specific suffix TL-E matches the required packaging and specifications. Check datasheet revisions to ensure compatibility with current design requirements before procurement.
Select this component for applications requiring 800V blocking capability and 1A current handling. Ensure the TO-92 package fits the board layout constraints. Consider the 10Ω on-resistance for thermal management in low-current switching scenarios.
This part belongs to the Sanyo single FET and MOSFET product line. It is categorized under power MOSFETs designed for general-purpose switching. The series includes various variants with different suffixes indicating packaging or testing differences.
Check for direct substitutes from onsemi which acquired Sanyo's semiconductor business. Verify pinout compatibility and electrical parameters against alternative N-channel MOSFETs with similar voltage and current ratings.