ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 500V 2A CPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：CPT3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The ROHM 2SK2715TL is a silicon N-channel MOSFET transistor designed for switching applications. It features a 500V breakdown voltage and a continuous drain current of 2A. The device guarantees a gate-source voltage (VGSS) of ±30V, ensuring robust gate protection. Key electrical characteristics include low on-resistance and fast switching speed, supported by a wide safe operating area (SOA). These specifications facilitate the design of efficient drive circuits and allow for easy parallel operation to increase current handling capabilities.
Feature Summary
- Low on-resistance for improved efficiency
- Fast switching speed for high-frequency performance
- Wide safe operating area (SOA)
- Guaranteed gate-source voltage of ±30V
Applications
- Audio visual equipment
- Office-automation equipment
- Communications devices
- Electrical appliances
Procurement Notes
Verify the specific suffix TL against the official datasheet to confirm packaging details such as tape and reel quantity. Confirm that the application environment remains within ordinary electronic equipment limits, as the component lacks radiation resistance and is not designated for safety-critical systems without prior consultation with the manufacturer.
Selection Notes
Select this component for general-purpose switching tasks requiring 500V blocking capability and 2A current capacity. The guaranteed ±30V gate-source voltage simplifies driver circuit design compared to standard 20V rated devices. Ensure thermal management aligns with the absolute maximum ratings provided in the datasheet for the intended ambient temperature conditions.
Part Context
This part belongs to the ROHM 2SK2715 series of silicon N-channel MOSFET transistors. The series is characterized by its suitability for general-purpose switching applications where moderate voltage and current ratings are required. The product utilizes silicon as the base material and is manufactured for use in standard consumer and industrial electronics.
Replacement Considerations
Consult the official ROHM documentation for direct substitutes. Verify pin compatibility and electrical parameters such as VDS, ID, and RDS(on) before replacing. Note that this product is not anti-radiation designed and requires manufacturer consultation for high-reliability or safety-critical deployments.
FAQ
What is the maximum gate-source voltage?
The gate-source voltage (VGSS) is guaranteed to be ±30V.
Is this component suitable for medical instruments?
No, it is designed for ordinary electronic equipment. Use in medical instruments requires prior consultation with the sales representative due to reliability requirements.
