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Product Detailed Parameters
- Description：MOSFET N-CH 900V 3A TO3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK2719(F) is an N-channel silicon MOSFET manufactured by Toshiba Semiconductor and Storage. It features a drain-source voltage rating of 900V and a continuous drain current capacity of 3A. The device is housed in a TO-3PN package, designed for high-voltage power switching applications. This component utilizes Metal Oxide semiconductor technology to provide efficient control in power circuits.
Feature Summary
- N-channel MOSFET configuration for power switching
- High voltage capability with 900V drain-source rating
- TO-3PN package for robust mounting
Applications
- Chopper regulator circuits
- DC-DC converter systems
- Motor drive applications
Procurement Notes
Verify the obsolete status of this component before integration into new designs. Confirm that the TO-3PN package dimensions match existing board layouts. Ensure compatibility with available replacement parts if supply chain continuity is required for long-term production.
Selection Notes
Select this part for high-voltage isolation requirements where 900V blocking is necessary. The 3A current rating suits moderate power loads. Consider the TO-3PN form factor for through-hole mounting needs. Evaluate thermal management solutions suitable for this specific package type during system design.
Part Context
This component belongs to Toshiba's power MOSFET lineup, specifically engineered for industrial and consumer power supplies. It represents a discrete solution for high-voltage switching tasks within the broader category of silicon-based field-effect transistors offered by the manufacturer.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data from official Toshiba channels or authorized distributors for equivalent specifications.
