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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1050 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FN
- Package / Case：TO-220-3 Full Pack
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Overview
The ROHM Semiconductor 2SK2740 is a silicon N-channel MOSFET designed for switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 7A at 25°C case temperature. The device exhibits low on-resistance and fast switching speed, supported by a wide safe operating area (SOA). The gate-source voltage is guaranteed to withstand ±30V. These characteristics facilitate easy drive circuit design and allow for straightforward parallel operation in power conversion systems.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed with wide safe operating area
- Guaranteed ±30V gate-source voltage rating
- Designed for easy drive circuits and parallel connection
Applications
- Audio visual equipment
- Office-automation equipment
- Communications devices
- Electrical appliances
Procurement Notes
Verify the specific package type and tape-and-reel quantity against the official datasheet before ordering. Confirm that the intended application falls within standard electronic equipment categories, as high-reliability uses require prior consultation with the manufacturer. Ensure all electrical parameters match the system requirements under actual operating temperatures.
Selection Notes
Select this component for general-purpose switching tasks requiring 600V blocking capability and moderate current handling. The guaranteed ±30V gate threshold simplifies driver selection compared to lower-rated devices. Consider thermal management strategies carefully, as performance depends on case temperature limits defined in the absolute maximum ratings section of the documentation.
Part Context
This part belongs to the ROHM transistor family, specifically categorized as a switching MOSFET. It utilizes silicon as the base semiconductor material. The product is classified for ordinary electronic equipment use and is not designed for radiation resistance or extreme safety-critical environments without special approval.
Replacement Considerations
Consult the official datasheet for direct substitutes. Verify pinout compatibility and electrical parameter margins when considering alternative manufacturers. No specific replacement part numbers are confirmed in the provided source material.
