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Product Detailed Parameters
- Description：MOSFET N-CH 50V 45A TO3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)
- Package / Case：TO-3P-3, SC-65-3
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Overview
The Toshiba 2SK2744 is a silicon N-channel MOS type field effect transistor utilizing the π-MOSV process. Designed for chopper regulators, DC-DC converters, and motor drive applications, it features a 4-V gate drive capability. The device provides a typical drain-source ON resistance of 15 mΩ and a forward transfer admittance of 27 S. It supports a maximum drain current of 45 A and dissipates up to 125 W at 25°C case temperature.
Feature Summary
- Optimized for low-voltage gate drive operation
- Low drain-source ON resistance for high efficiency
- High forward transfer admittance for fast switching
- Enhancement mode with low leakage current
Applications
- Chopper Regulator
- DC-DC Converter
- Motor Drive
Procurement Notes
Verify RoHS compatibility status through official Toshiba sales representatives, as indicated by lot number markings on the package. Confirm environmental compliance against Directive 2002/95/EC prior to integration. Ensure design accounts for electrostatic sensitivity during handling. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods to maintain product reliability under heavy loads.
Selection Notes
Select this component for applications requiring a 4-V gate drive interface and high current handling up to 45 A. The low thermal resistance of 1.0 °C/W from channel to case facilitates effective heat sinking. Consider the 50 V breakdown voltage and 125 W power dissipation limits when designing the circuit layout and thermal management system for continuous or pulsed operations.
Part Context
This part belongs to the Toshiba Silicon N Channel MOS Type (π-MOSV) family. It is specifically engineered for high-speed, high-voltage switching tasks. The device integrates an internal body diode with defined reverse recovery characteristics. It is packaged in a TO-220 style flange mount configuration suitable for direct heatsink attachment.
Replacement Considerations
Consult Toshiba documentation for verified substitutes within the 2SK274x series, such as the 2SK2742 or 2SK2741, which share similar application profiles for chopper regulators and motor drives.
