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The Panasonic 2SK2751 is a silicon N-channel junction FET designed for low-frequency impedance conversion and pyroelectric sensor applications. It operates within an absolute maximum drain current of 10 mA and a power dissipation of 200 mW at 25°C. The device features a gate-drain surrender voltage of -40 V and a forward transfer admittance of 2.5 mS at 1 kHz. Electrical characteristics include a drain-source current of 1.4 to 4.7 µA and short-circuit capacitances (Ciss, Coss, Crss) of 5.0 pF, 1.0 pF, and 1.0 pF respectively. It utilizes the Mini3-G1 package with Source, Drain, and Gate pin configurations.
Verify component authenticity through authorized distributors. Confirm RoHS compliance status as per EU Directive 2002/95/EC. Review the latest product standards on the official Panasonic semiconductor website before finalizing orders due to potential lifecycle changes.
Evaluate thermal management requirements against the 200 mW power dissipation limit. Ensure operating conditions remain within the specified ambient temperature range. Consider the Mini3-G1 package dimensions for PCB layout constraints and verify compatibility with automated assembly equipment.
This component belongs to the Silicon Junction FETs (Small Signal) category from Panasonic Electronic Components. It is specifically categorized for use in low-frequency impedance conversion tasks. The datasheet indicates it complies with RoHS directives and utilizes specific Japanese Industrial Standard measurement methods.
Consult the official Panasonic semiconductor website for the most current product lifecycle information regarding maintenance or discontinuation status. Verify electrical parameters such as forward transfer admittance and capacitance values against alternative components to ensure circuit compatibility.