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Product Detailed Parameters
- Description：2SK2857-T1-AZ - N-CHANNEL MOSFET
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：265 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-62
- Package / Case：TO-243AA
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Overview
The Renesas 2SK2857-T1-AZ is an N-channel vertical MOSFET designed for general-purpose switching applications. It features a 60 V drain-source voltage rating and supports a continuous drain current of 4 A at ambient temperature, with a power dissipation capacity of 2 W. The device utilizes an SC-62 surface-mount package. It is engineered to be driven directly by low-voltage logic sources, specifically compatible with 4.0 V and 5 V power supplies, ensuring efficient operation in high-speed switching circuits.
Feature Summary
- Capable of direct drive from 4.0 V or 5 V logic power sources
- Optimized for high-speed and low-voltage switching operations
- Designed for analog and digital signal switching applications
Applications
- Actuator drivers
- High-speed switching circuits
- Analog and digital signal switching
Procurement Notes
Verify the specific suffix -T1-AZ against the manufacturer's official documentation to confirm package type and marking codes. Confirm availability status as distributors may list this component as obsolete or end-of-life. Ensure the ordering part number matches the required electrical specifications and packaging format before procurement.
Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage logic control. The SC-62 package suits space-constrained designs. Verify that the 60 V breakdown voltage and 4 A current rating align with the load requirements. Consider thermal management capabilities given the 2 W power dissipation limit in the specified package.
Part Context
This component belongs to the Renesas 2SK2857 series of N-channel MOS field-effect transistors. The series includes variants such as 2SK2857C and 2SK2857, which share similar functional characteristics but may differ in specific electrical parameters or packaging configurations. The -T1-AZ designation indicates a specific tape-and-reel packaging option.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or cross-reference tools for verified alternatives.
