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Product Detailed Parameters
- Description：MOSFET N-CH 800V 3A TO220SM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.6Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-220SM
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Toshiba 2SK2883 is a silicon N-channel MOS field-effect transistor utilizing π-MOS III technology. It features an 800 V drain-source breakdown voltage and supports a continuous DC drain current of 3 A, with a peak pulse current capability of 9 A. The device exhibits a typical low on-resistance of 3.0 Ω at a gate-source voltage of 10 V. Key electrical characteristics include a forward transfer admittance of 2.6 S and a maximum gate leakage current of ±10 μA. Thermal management is supported by a channel-to-case thermal resistance of 1.67 °C/W, allowing for a maximum channel temperature of 150 °C.
Feature Summary
- High-voltage operation capability up to 800 V
- Low on-resistance for efficient power switching
- Robust avalanche energy handling
- Enhancement mode threshold control
Applications
- Chopper regulator circuits
- DC-DC converter designs
- Motor drive systems
Procurement Notes
Verify the specific ordering suffix (e.g., TE24L, Q) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, and package type. Confirm that the requested lot number markings align with your manufacturing requirements. Ensure all design parameters remain within the absolute maximum ratings provided in the datasheet to maintain product reliability.
Selection Notes
Select this component when high-voltage isolation and moderate current handling are required. The 800 V rating suits applications involving significant potential differences. Evaluate the thermal resistance specifications against your heat dissipation strategy. Consider the gate threshold voltage range to ensure compatibility with your logic or driver circuitry levels.
Part Context
This part belongs to Toshiba's discrete semiconductor lineup, specifically designed as a power MOSFET. It utilizes advanced π-MOS III structure technology to optimize performance metrics like on-resistance and switching speed. The device is categorized under general electronics applications, excluding unintended uses in safety-critical or aerospace sectors without explicit permission.
Replacement Considerations
Consult official Toshiba replacement guides for verified substitutes. Cross-referencing requires matching critical parameters such as voltage rating, current capacity, and package dimensions. Generic equivalents may not replicate the specific π-MOS III structural benefits.
