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The 2SK2887 is a silicon N-channel MOSFET transistor designed for switching applications. It features low on-resistance, fast switching speed, and a wide safe operating area (SOA). The device guarantees a gate-source voltage of ±30V, facilitating easy drive circuit design and parallel operation.
Verify the specific ordering suffix to confirm packaging quantity and tape-and-reel specifications. Confirm that the application aligns with ordinary electronic equipment standards, as high-reliability automotive or medical use requires direct consultation with the manufacturer.
Select this component for general-purpose switching circuits requiring robust performance. The guaranteed ±30V gate-source rating simplifies driver selection. Ensure thermal management supports the power dissipation requirements during continuous operation.
This part belongs to Rohm Semiconductor's discrete transistor portfolio. It utilizes a silicon N-channel structure optimized for standard consumer electronics. The device is not designed for radiation environments or safety-critical systems without prior approval.
Consult official documentation for verified substitutes. No replacement part numbers are explicitly listed in the provided source material.
The gate-source voltage (VGSS) is guaranteed to be ±30V.
No. The product is designed for ordinary electronic equipment. Use in aerospace machinery requires consulting the sales representative due to extreme reliability requirements.