2SK2887TL

2SK2887TL

  • Description:MOSFET N-CH 200V 3A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fd3bde62a269 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 200V 3A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:900mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:CPT3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK2887TL

Overview

The 2SK2887 is a silicon N-channel MOSFET transistor designed for switching applications. It features low on-resistance, fast switching speed, and a wide safe operating area (SOA). The device guarantees a gate-source voltage of ±30V, facilitating easy drive circuit design and parallel operation.

Feature Summary

  • Low on-resistance
  • Fast switching speed
  • Wide SOA
  • Guaranteed ±30V gate-source voltage

Applications

  • Audio visual equipment
  • Office-automation equipment
  • Communications devices
  • Electrical appliances
  • Electronic toys

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and tape-and-reel specifications. Confirm that the application aligns with ordinary electronic equipment standards, as high-reliability automotive or medical use requires direct consultation with the manufacturer.

Selection Notes

Select this component for general-purpose switching circuits requiring robust performance. The guaranteed ±30V gate-source rating simplifies driver selection. Ensure thermal management supports the power dissipation requirements during continuous operation.

Part Context

This part belongs to Rohm Semiconductor's discrete transistor portfolio. It utilizes a silicon N-channel structure optimized for standard consumer electronics. The device is not designed for radiation environments or safety-critical systems without prior approval.

Replacement Considerations

Consult official documentation for verified substitutes. No replacement part numbers are explicitly listed in the provided source material.

FAQ

What is the maximum guaranteed gate-source voltage?

The gate-source voltage (VGSS) is guaranteed to be ±30V.

Is this device suitable for aerospace machinery?

No. The product is designed for ordinary electronic equipment. Use in aerospace machinery requires consulting the sales representative due to extreme reliability requirements.

2SK2887TL2SK2887TL

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