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Product Detailed Parameters
- Description：MOSFET N-CH 500V 14A TO3PIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)IS
- Package / Case：TO-3P-3, SC-65-3
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Overview
The Toshiba 2SK2916 is a silicon N-channel MOS field-effect transistor utilizing π-MOSV technology. It features a drain-source voltage rating of 500 V and a continuous DC drain current capacity of 14 A at 25°C case temperature. The device exhibits a typical low drain-source ON resistance of 0.35 Ω and a high forward transfer admittance of 11 S. Electrical characteristics include a gate threshold voltage ranging from 2.0 to 4.0 V, a maximum gate leakage current of ±10 μA, and a single pulse avalanche energy capability of 795 mJ.
Feature Summary
- Utilizes π-MOSV technology for enhanced performance
- Features low drain-source ON resistance
- Provides high forward transfer admittance
- Supports single pulse avalanche energy operation
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package marking matches the standard K2916 identifier. Ensure the component meets the required thermal management specifications for the intended operating environment before finalizing procurement.
Selection Notes
Select this component for designs requiring a 500 V breakdown voltage with a 14 A continuous current rating. Consider the 0.35 Ω typical ON resistance for efficiency optimization in power switching applications. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the 150 °C channel temperature limit during operation.
Part Context
This component belongs to the Toshiba 2SK series of silicon N-channel MOSFETs designed for general electronics applications. It is housed in a TO-220E package and is intended for use in computers, industrial robots, and home electronics appliances. The device is not intended for automotive or aerospace applications unless explicitly permitted by the manufacturer.
Replacement Considerations
Consult official Toshiba Semiconductor and Storage documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying electrical parameters and pin configurations.
