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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The Toshiba 2SK2962 is a silicon N-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a 100 V drain-source voltage rating and operates in enhancement mode with a gate threshold voltage of 0.8 to 2.0 V. The device supports a continuous DC drain current of 1 A and a pulse current of 3 A, with a maximum power dissipation of 0.9 W. Key electrical characteristics include a typical drain-source ON resistance of 0.5 Ω at VGS = 4 V and a forward transfer admittance of 1.2 S. It is housed in a JEDEC TO-92MOD package.
Feature Summary
- Utilizes L²-π-MOSV technology for enhanced performance
- Supports low-voltage 4-V gate drive operation
- Features high forward transfer admittance for efficient switching
- Designed for chopper regulators and DC-DC converters
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drive Applications
Procurement Notes
Verify the specific ordering suffix (e.g., F(J)) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the component meets the absolute maximum ratings for channel temperature and avalanche energy if used in inductive load scenarios. Ensure electrostatic discharge precautions are observed during handling.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with low ON resistance and high transconductance. The TO-92MOD package suits space-constrained designs. Verify thermal management requirements, as the device has a limited power dissipation rating of 0.9 W. Ensure the gate drive voltage aligns with the specified 4-V or 10-V thresholds for optimal RDS(ON) performance.
Part Context
The 2SK2962 belongs to Toshiba's series of silicon N-channel MOS field-effect transistors designed for general electronics applications. It is manufactured using L²-π-MOSV technology, which contributes to its low on-resistance and high speed capabilities. The device is intended for use in computers, office equipment, and industrial robots, excluding unintended uses like aerospace or medical systems.
Replacement Considerations
Consult Toshiba Semiconductor and Storage for officially confirmed substitute part numbers. Cross-referencing with other manufacturers requires verifying pinout compatibility, voltage ratings, and thermal characteristics.
