2SK2963(TE12L,F)

Description：MOSFET N-CH 100V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:f1bec4b04720 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PW-MINI
Package / Case：TO-243AA

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2SK2963(TE12L,F)

Overview

The Toshiba 2SK2963(TE12L,F) is a silicon N-channel MOS field-effect transistor utilizing L²-π-MOS V technology. It features a drain-source voltage rating of 100 V and a continuous DC drain current capacity of 1 A. The device exhibits a typical drain-source on-resistance of 0.5 Ω at a gate-source voltage of 10 V, with a maximum leakage current of 100 μA. Designed for low-voltage logic compatibility, it supports 4-V gate drive operation with a threshold voltage range of 0.8 to 2.0 V.

Feature Summary

Utilizes L²-π-MOS V technology for enhanced switching performance
Compatible with standard 4-V gate drive logic levels
Features low forward transfer admittance for efficient control
Designed for high-speed switching applications

Applications

DC-DC converter circuits
Relay drive systems
Motor drive applications

Procurement Notes

Verify the specific ordering suffix (TE12L,F) against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement. Confirm that the component meets all absolute maximum ratings required by your specific circuit design.

Selection Notes

Select this component when a 100 V N-channel MOSFET with low on-resistance is required for compact designs. Consider its 4-V gate drive capability if interfacing directly with low-voltage logic controllers. Evaluate thermal resistance requirements carefully, as the device has a channel-to-ambient thermal resistance of 250 °C/W in free air.

Part Context

This part belongs to Toshiba's discrete semiconductor lineup focused on small-signal and power switching applications. The 2SK2963 series represents an evolution in silicon MOS technology designed to balance conduction losses with switching speeds. It serves as a specialized solution for embedded power management tasks within consumer and industrial electronics.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics strictly with manufacturer data sheets to ensure functional compatibility without redesigning the host circuit board.