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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The Toshiba 2SK2989 is a silicon N-channel MOS field-effect transistor utilizing π-MOSVI technology, designed for chopper regulators, DC-DC converters, and motor drives. It features a low drain-source ON resistance of 120 mΩ (typical) at VGS = 10 V and ID = 2.5 A, alongside a high forward transfer admittance of 2.6 S. The device operates with a gate threshold voltage between 1.0 V and 2.2 V and supports a maximum drain current of 5 A continuous or 15 A pulse. Packaged in a TO-92MOD format, it provides robust thermal performance with a channel-to-ambient thermal resistance of 138 °C/W.
Feature Summary
- Utilizes π-MOSVI technology to achieve low on-resistance and high forward transfer admittance
- Features enhancement-mode operation with a defined gate threshold voltage range
- Designed for efficient switching applications including chopper regulators and motor drives
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drive Circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package marking aligns with the intended lot number indication requirements. Ensure the design accounts for the absolute maximum ratings regarding channel temperature and power dissipation limits during procurement planning.
Selection Notes
Select this component when a low RDS(ON) value is required for improved efficiency in power switching applications. Consider the 50 V breakdown voltage and 5 A continuous current capability for appropriate load matching. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range without exceeding the 150°C channel temperature limit.
Part Context
This part belongs to the Toshiba discrete semiconductor portfolio, specifically categorized under silicon N-channel MOSFETs. It is engineered using the company's proprietary π-MOSVI process technology. The device is distinct from general-purpose logic transistors due to its optimized power handling capabilities and specific electrical parameters tailored for power conversion and control circuits.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as breakdown voltage, current rating, and package type to ensure functional equivalence in the target circuit design.
