2SK3004

Overview

The Sanken Electric 2SK3004 is a silicon N-channel power MOSFET designed for high-current switching applications. It features a breakdown voltage of 250 V and a continuous drain current rating of ±18 A at 25°C case temperature. The device exhibits a maximum on-resistance of 250 mΩ at VGS = 10V and ID = 9A, with a typical forward transconductance of 7 to 11 S. Key electrical parameters include a gate-source leakage current of ±100 nA at ±20V and a threshold voltage range of 2.0 to 4.0 V. The component supports pulsed drain currents up to ±72 A and dissipates 35 W of power under specified thermal conditions.

Feature Summary

• High-voltage capability with a 250 V drain-source breakdown voltage suitable for demanding power conversion environments.
• Low on-state resistance characteristics enabling efficient conduction with minimal power loss during operation.
• Robust avalanche energy handling rated at 120 mJ for improved reliability in inductive load switching scenarios.

Applications

• Motor driver circuits
• Power supply units
• Chopper circuits

Procurement Notes

Verify the specific package variant (FM20 or FM100) required for your design, as dimensions differ. Confirm that the component is not recommended for new designs per manufacturer guidelines. Ensure thermal management meets the 35 W dissipation requirement at Tc=25°C. Check for UL approval status if safety certification is mandatory for your application.

Selection Notes

Select this component when a 250 V rating and 18 A continuous current are necessary. Consider the 250 mΩ RDS(on) for efficiency requirements at 9 A loads. Evaluate the TO-220F or TO-3PF package options based on mounting constraints and heat sinking capabilities. Verify compatibility with drive voltages given the 2.0–4.0 V threshold range.

Part Context

This part belongs to Sanken Electric's discrete semiconductor lineup, specifically power MOSFETs. It utilizes silicon technology and is available in through-hole packages like FM20 and FM100. The product line targets industrial and automotive power electronics, focusing on robust performance in motor control and power conversion systems.

Replacement Considerations

Consult official substitution lists for equivalent N-channel MOSFETs with matching 250 V and 18 A ratings. Verify pinout compatibility and thermal resistance values before replacing. Ensure any substitute meets the same avalanche energy and package dimension specifications.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is ±72 A at Ta = 25°C.

Is this component suitable for new designs?

No, the datasheet explicitly states it is not recommended for new designs.