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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100MA SOT323
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The 2SK3018-TP is a single-channel N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 100 mA, with a pulsed drain current rating of 400 mA. The maximum drain-source on-resistance is specified at 8 Ohms under standard test conditions. Power dissipation is rated at 200 mW at 25°C ambient temperature, extending to 300 mW based on junction thermal resistance limits. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- ESD protection capability up to 2KV using Human Body Model standards
- Moisture sensitivity level 1 classification for reliable handling
- Halogen-free green device construction meeting environmental standards
- Epoxy material compliant with UL 94 V-0 flammability ratings
Applications
- Low-power switching circuits requiring small form factor components
- Battery-powered portable electronic devices
- Signal processing applications utilizing low gate threshold voltages
- General purpose amplification stages in consumer electronics
Procurement Notes
Verify the authenticity of the 2SK3018-TP by purchasing exclusively from Micro Commercial Components or their authorized distributors to avoid counterfeit parts. Ensure the ordering suffix matches the required tape and reel packaging configuration. Confirm that the specific revision of the datasheet aligns with your design requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate voltage blocking capabilities is required. The SOT-323-3 package suits space-constrained printed circuit board layouts. Consider the 8 Ohm on-resistance limit for efficiency calculations in low-current paths. Verify that the 30 V drain-source voltage exceeds the maximum operating voltage of the target application circuit.
Part Context
This part belongs to the MCC discrete semiconductor portfolio, specifically within the MOSFET category. It represents a silicon-based solution designed for surface mount technology assembly. The product line emphasizes compliance with international environmental directives while maintaining standard electrical performance metrics for general-purpose transistor applications.
Replacement Considerations
Direct substitute part numbers are not explicitly documented in the provided source material. Engineers should evaluate alternative components based on matching pin configurations, voltage ratings, and package dimensions. Cross-referencing electrical characteristics against the original design specifications is necessary to ensure functional compatibility.
