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The 2SK303-3-TB-E is a small signal N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates in depletion mode with a maximum drain-source breakdown voltage of 30V and a continuous drain current rating of 20mA. The device utilizes a silicon junction FET technology housed in a SOT-23 surface-mount package. It supports an operating temperature range up to 150°C and complies with RoHS standards, indicating it is halogen-free.
Verify the manufacturer designation carefully, as the 2SK303 series was originally developed by UNISONIC TECHNOLOGIES CO., LTD. Confirm that the specific suffix -3-TB-E corresponds to the intended SOT-23 packaging and lead-free halogen-free specifications required for the assembly process. Ensure the component meets current environmental compliance standards before integration.
Select this component when a depletion-mode JFET is required for low-noise, low-frequency signal processing. The 30V breakdown voltage and 20mA current limit define its operational boundaries. Consider the SOT-23 package size for space-constrained designs requiring surface-mount technology compatibility.
This part belongs to the 2SK303 family of low-frequency general-purpose JFETs. While the base model is widely documented under UNISONIC TECHNOLOGIES branding, the onsemi designation suggests a specific distribution or rebranding channel. The -TB-E suffix typically denotes the SOT-23 package variant within this product line.
Direct substitutes include other N-channel JFETs with similar Vds and Id ratings, such as the 2N5457 or J111, though pinouts and exact electrical characteristics must be verified. Check datasheets for gate leakage current and transconductance differences to ensure circuit stability.