2SK3047

Description：MOSFET N-CH 800V 2A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:ca9af8238133 Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 2A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3047

Overview

The Panasonic 2SK3047 is a Silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features an 800 V drain-source voltage rating and supports a continuous drain current of ±2 A, with a peak capability of ±4 A. The device guarantees avalanche energy capability exceeding 15 mJ and includes a built-in diode with a forward voltage of -1.3 V at 2 A. Electrical characteristics include a maximum drain-source ON resistance of 7.0 Ω and a gate threshold voltage range of 2.0 to 5.0 V.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance with defined turn-on and fall times
No secondary breakdown characteristic ensuring stable high-voltage handling

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control units
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued categories. Confirm that the required package variant matches the TO-220D-A1 specification. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Review the latest product standards from the manufacturer to confirm current availability and any potential specification updates prior to finalizing orders.

Selection Notes

Select this component when designing circuits requiring high-voltage isolation up to 800 V with moderate current handling capabilities around 2 A. The guaranteed avalanche energy rating makes it suitable for inductive load applications where transient spikes are expected. Consider the thermal resistance values when designing heat dissipation strategies, particularly for ambient temperature variations. Verify that the gate threshold voltage aligns with your driver logic levels for reliable switching.

Part Context

This part belongs to the Panasonic Power MOSFET series designed for general electronic equipment and standard applications. It is intended for use in office equipment, communications gear, and measuring instruments. The device is not recommended for special applications requiring exceptional reliability, such as aerospace or life support systems, without prior consultation with the manufacturer.