2SK3048

Description：MOSFET N-CH 600V 3A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:30e46393f1ba Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 3A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 35W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3048

Overview

The Panasonic 2SK3048 is a silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features a drain-source voltage rating of 600 V and a continuous drain current capacity of ±3 A at 25°C, with a peak pulse current of ±6 A. The device guarantees an avalanche energy capability of 22.5 mJ and exhibits low on-resistance (typical 1.7 Ω). Thermal resistance from channel to case is 3.5 °C/W, supporting operation up to a channel temperature of 150 °C.

Feature Summary

Guaranteed avalanche energy capability for robust transient handling
High-speed switching performance with defined delay and rise/fall times
Low on-resistance design for efficient conduction
No secondary breakdown unit ensuring safe operating area stability

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control equipment
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status before procurement, as this component may be subject to maintenance or discontinuation phases. Consult official Panasonic Semiconductor channels for the most current Product Standards and availability information. Ensure compliance with RoHS directives applicable to your region. Confirm that the TO-220D-A1 package meets your thermal and mechanical mounting requirements.

Selection Notes

Select this component for applications requiring high-voltage isolation up to 600 V and moderate current handling around 3 A. The guaranteed avalanche energy makes it suitable for inductive load switching where transient spikes are common. Evaluate the thermal resistance characteristics against your heat sink design to ensure the junction temperature remains within the 150 °C limit under expected operating conditions.

Part Context

This part belongs to the Panasonic Silicon N-channel Power F-MOS FET series. These devices are designed for general electronic equipment and standard applications such as office equipment, communications gear, and measuring instruments. They are not intended for special applications like aerospace or life support systems without prior consultation.