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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3060-Z-E1-AZ is a switching N-Channel Power MOSFET manufactured by Renesas Electronics Corporation. It features a single channel design with a drain current (ID) of 50 A. The component is housed in a surface-mount package with dimensions of 10 x 8 x 4.8 mm and utilizes an embossed tape carrier type for automated handling. It is lead-free compliant but not lead-compliant under specific regulatory definitions. The device is designed for high-efficiency switching applications within industrial and consumer use categories.
Feature Summary
- N-Channel power field-effect transistor architecture
- Surface mount mounting type for PCB integration
- Lead-free construction
- Single channel configuration
Applications
- Industrial equipment power management
- Consumer electronics switching circuits
- High-efficiency power control systems
Procurement Notes
Verify the specific lead compliance status against target market regulations, as the component is noted as non-lead-compliant despite being lead-free. Confirm the embossed tape packaging format matches automated assembly requirements. Ensure the 50 A drain current rating aligns with the thermal management capabilities of the intended application environment. Cross-reference the exact suffix Z-E1-AZ to confirm availability and manufacturing origin details.
Selection Notes
Select this component for applications requiring a robust N-Channel MOSFET with a 50 A continuous drain current capability. The compact 10 x 8 x 4.8 mm surface-mount package facilitates space-constrained designs. Consider the thermal performance characteristics inherent to the TOLL or similar derivative packages when designing heat dissipation strategies. Verify that the single-channel requirement fits the circuit topology without necessitating parallel configurations.
Part Context
This part belongs to Renesas' portfolio of power discrete semiconductors, specifically focusing on switching MOSFETs. The product line targets efficiency improvements in power conversion stages. The specific model integrates standard industry interface requirements while adhering to environmental directives regarding lead content. It serves as a fundamental building block for modern power electronic systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Renesas replacement guides or distributor cross-reference tools for compatible alternatives with matching electrical parameters and package dimensions.
