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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100MA SMINI3-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：50Ohm @ 10mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMini3-G1
- Package / Case：SC-70, SOT-323
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Overview
The Panasonic 2SK3064 is a silicon N-channel MOSFET designed for switching circuits and rechargeable battery packs. It features a high gate-source voltage rating of ±20 V and a low gate threshold voltage of 1.0 to 2.0 V. The device operates with a drain-source breakdown voltage of 30 V and a continuous drain current of 100 mA. Packaged in an EIAJ SC-70 SMini3-G1 format, it provides a power dissipation capacity of 150 mW at 25°C ambient temperature.
Feature Summary
- High gate-source voltage withstand capability
- Low gate threshold voltage for efficient switching
- Designed for use in rechargeable battery packs
Applications
- Switching circuits
- Rechargeable lithium-ion battery packs
Procurement Notes
Verify the current lifecycle status before procurement as the component is listed under maintenance or discontinued categories. Consult official Panasonic semiconductor channels for the most up-to-date product standards and availability information. Ensure compliance with RoHS directives and handle the electrostatic-sensitive device according to standard precautions during storage and mounting processes.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 30 V drain-source voltage rating. The low gate threshold voltage facilitates control by low-voltage logic signals. Consider the 100 mA continuous drain current limit and the SC-70 package size when designing space-constrained circuits for battery management systems.
Part Context
This part belongs to the Panasonic Silicon MOSFET family for small signal applications. It is specifically engineered for general electronic equipment and standard switching tasks. The device utilizes a thin-film process suitable for portable electronics and battery-powered devices where low power consumption and small footprint are critical design requirements.
Replacement Considerations
Consult official Panasonic documentation for confirmed substitute part numbers. Verify that any replacement matches the 30 V DSS rating, 100 mA ID current, and SC-70 package dimensions to ensure mechanical and electrical compatibility.
