2SK3065T100

$0.63

Description：MOSFET N-CH 60V 2A MPT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aea1fd905b1f Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 2A MPT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：320mOhm @ 1A, 4V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MPT3
Package / Case：TO-243AA

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2SK3065T100

Overview

The 2SK3065T100 is a silicon N-channel MOSFET transistor manufactured by ROHM Semiconductor. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 2A. The device operates with a gate threshold voltage range of 0.8V to 1.5V, enabling undervoltage actuation at 2.5V. Static on-state resistance is typically 0.25Ω at VGS=4V and 0.32Ω at VGS=2.5V. Total power dissipation is rated at 0.5W at 25°C case temperature. Switching characteristics include a turn-on delay time of 20ns, rise time of 50ns, turn-off delay time of 120ns, and fall time of 70ns. The component is housed in an MPT3 (SC-62) surface-mount package.

Feature Summary

Low on-state resistance for efficient power control
High-speed switching capability suitable for high-frequency applications
Undervoltage actuation support for low-voltage environments
Built-in gate protection diode against electrostatic discharge

Applications

Portable device power switches
Motor drive circuits
Pocket resource management systems

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm that the T100 suffix corresponds to tape and reel packaging containing 1000 units per basic ordering quantity. Ensure compatibility with existing SOT-89 footprint designs as no new design recommendations are currently provided for this specific part number.

Selection Notes

Select this component when a small switching N-channel MOSFET with 60V breakdown is required. It is appropriate for applications needing simple driving circuits and parallel usage capabilities. Consider its 2A continuous current limit and 0.5W power dissipation constraints during thermal design. Verify that the 2.5V drive requirement aligns with the system's logic levels.

Part Context

This device belongs to the ROHM Small switching transistor series. It utilizes a silicon N-channel structure within an MPT3/SC-62 surface-mount package. The component integrates a protection diode between the gate and source terminals. It is designed for industrial equipment applications requiring compact size and reliable performance under static discharge conditions.