2SK3116(1)-ZK-E2-AZ

$1.92

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:7ab5fd47cb11 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3116(1)-ZK-E2-AZ

Overview

The 2SK3116(1)-ZK-E2-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is a single enhancement-mode device built with metal-oxide semiconductor technology. The component supports surface mount installation in the TO-263ABVAR package. It features a maximum drain current of 82 A and a breakdown voltage of 60 V. The unit handles a maximum power dissipation of 95 W and operates at temperatures up to 150 °C. The part is RoHS compliant.

Feature Summary

N-channel DMOS FET structure designed for high voltage applications
Low gate charge characteristics enabling efficient switching performance
Enhanced mode operation suitable for power management circuits

Applications

High voltage power switching systems
General purpose power management applications

Procurement Notes

Verify the specific ordering suffix against official Renesas documentation to confirm exact pinout, thermal pad configuration, and compliance status. Ensure the selected variant matches the required package type and lead-free specifications for the target assembly process. Cross-reference the manufacturer part number with authorized distribution channels to guarantee authenticity and traceability.

Selection Notes

Select this component for designs requiring robust N-channel power switching with low gate drive requirements. The TO-263ABVAR package facilitates effective heat dissipation for moderate power levels. Evaluate the 60 V breakdown voltage and 82 A current rating against circuit load conditions to ensure adequate safety margins during peak operation.

Part Context

This device belongs to the Renesas discrete semiconductor transistor portfolio. It utilizes advanced DMOS technology to deliver reliable performance in demanding electrical environments. The product line focuses on providing efficient power control solutions for industrial and consumer electronics markets.

Replacement Considerations

Consult official substitution guides for compatible N-channel MOSFETs with matching voltage and current ratings. Verify pin compatibility and thermal characteristics before integrating alternative components into existing layouts.