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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A TO3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)
- Package / Case：TO-3P-3, SC-65-3
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Overview
The Toshiba 2SK3128 is a silicon N-channel MOS type field effect transistor utilizing π-MOS VI technology. It features a low drain-source ON resistance of 9.5 mΩ (typical) and high forward transfer admittance of 40 S (typical). The device supports a continuous DC drain current of 60 A and a pulse drain current of 180 A, with a maximum drain-source voltage rating of 30 V. Thermal characteristics include a channel-to-case thermal resistance of 1.0 °C/W and a maximum channel temperature of 150°C.
Feature Summary
- Low drain-source ON resistance for efficient power handling
- High forward transfer admittance for effective switching performance
- Low leakage current to minimize standby losses
- Enhancement mode operation with defined gate threshold voltage
Applications
- Chopper Regulator circuits
- DC-DC Converter designs
- Motor Drive systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Ensure the component meets RoHS compliance requirements if applicable to your design. Confirm that the absolute maximum ratings are not exceeded in your final application circuit to maintain reliability standards.
Selection Notes
Select this component for applications requiring high current switching capabilities within a 30V system. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate charge parameters to determine driver requirements for optimal switching speeds in chopper or motor drive topologies.
Part Context
This part belongs to Toshiba's discrete semiconductor lineup, specifically designed as an N-channel MOSFET. It is engineered for general electronics applications such as industrial robotics and domestic appliances, distinct from automotive or medical safety-critical devices which require different qualification standards.
Replacement Considerations
Consult official replacement guides for verified substitutes. Ensure any alternative device matches the 30V drain-source voltage, 60A continuous current, and TO-263 package dimensions for direct compatibility.
