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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3221-AZ is an N-channel DMOS FET manufactured by Renesas Electronics. It features a drain-source breakdown voltage of 600V and a maximum continuous drain current of 5.5A. The device exhibits a low on-state resistance of 2.2 ohms at VGS=10V and ID=2.8A, with a typical gate charge of 15nC. Designed for high-voltage applications, it operates within a gate voltage rating of ±30V and utilizes the TO-220AB package.
Feature Summary
- Low gate charge for efficient switching performance
- Low on-state resistance to minimize conduction losses
- High voltage capability suitable for power supply applications
Applications
- Switching power supplies
- AC adapters
Procurement Notes
Verify the exact part number against official Renesas documentation, as the specific suffix -AZ may denote packaging or environmental compliance variations. Confirm availability through authorized distributors and check for any recent product change notices that might affect specifications or lead times.
Selection Notes
Select this component for designs requiring robust high-voltage switching capabilities with moderate current handling. Ensure the thermal management solution accommodates the power dissipation characteristics in the TO-220AB package. Verify that the drive circuitry can support the specified gate voltage ratings safely.
Part Context
This device belongs to the family of N-channel power MOSFETs from Renesas, designed for general-purpose high-voltage switching. It complements other discrete semiconductors in power conversion circuits, offering a balance between voltage rating and on-resistance for efficient energy transfer.
Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 600V/5.5A ratings and TO-220AB compatibility. Verify pinout and electrical parameters before implementation.
