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Product Detailed Parameters
- Description：N-CHANNEL SMALL SIGNAL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3230B-T1-A is an N-channel small-signal Junction Field-Effect Transistor (JFET) manufactured by Renesas Electronics Corporation. It is categorized under RF and Microwave discrete semiconductor products, designed for small-signal applications requiring high input impedance. The component features a single channel configuration and is supplied in embossed tape packaging. It is compliant with lead-free and lead-compliant standards, ensuring adherence to environmental regulations such as RoHS3.
Feature Summary
- High input impedance characteristic suitable for sensitive signal processing
- Designed specifically for RF and microwave small-signal applications
- Single-channel N-channel junction FET architecture
Applications
- RF front-end circuits
- Microwave signal amplification
- Industrial and consumer electronic signal conditioning
Procurement Notes
Verify the specific datasheet for the 2SK3230B-T1-A variant, as public documentation often references the general 2SK3230 series. Confirm that the embossed tape packaging matches system requirements. Ensure compliance with RoHS3 standards is documented for the specific manufacturing batch. Cross-reference the manufacturer part number to distinguish between standard and automotive grades if applicable.
Selection Notes
Select this component for applications demanding high input impedance in RF and microwave environments. It serves as a discrete solution for small-signal processing where JFET characteristics are preferred over MOSFETs. Consider the embossed tape packaging for automated assembly processes. Validate thermal and electrical limits against the specific circuit design requirements before integration.
Part Context
This device belongs to Renesas' portfolio of discrete semiconductor products, specifically within the RF and Microwave category. It complements the company's broader analog and power management solutions. The product line supports various industrial and consumer electronics markets, providing essential components for signal chain integrity in high-frequency applications.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2SK3230B-T1-A are not available in the provided source material. Engineers should consult official Renesas documentation or authorized distributors for qualified alternatives.
