2SK3309(Q)

Description：MOSFET N-CH 450V 10A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:67d671afb460 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 10A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FL
Package / Case：TO-220-3, Short Tab

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2SK3309(Q)

Overview

The Toshiba 2SK3309(Q) is a silicon N-channel MOS field-effect transistor designed for switching regulator applications. It features a low drain-source ON resistance of 0.48 Ω (typical) and high forward transfer admittance of 4.3 S (typical). The device supports a maximum drain-source voltage of 450 V and a continuous DC drain current of 10 A, with pulse currents reaching 40 A. Key electrical characteristics include a gate threshold voltage between 3.0 V and 5.0 V, a maximum gate leakage current of ±10 μA, and a maximum drain cut-off current of 100 μA at 450 V. Thermal performance includes a channel-to-case thermal resistance of 1.92 °C/W.

Feature Summary

Optimized π-MOSV structure for low on-resistance and high-speed switching in power supplies
Capable of handling repetitive avalanche energy for robust circuit protection
Enhancement-mode operation with defined gate threshold voltage ranges

Applications

Switching regulators
DC-DC converters
General electronics applications including industrial robots and home appliances

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm package type and marking details. Ensure compliance with export regulations and intended use restrictions outlined in the datasheet. Confirm environmental compliance status directly with the manufacturer or authorized distributor as RoHS compatibility requires specific verification.

Selection Notes

Select this component for designs requiring high-voltage N-channel switching with moderate current capabilities. Evaluate the thermal resistance and safe operating area curves to ensure adequate heat dissipation under expected load conditions. Consider the gate charge parameters when designing drive circuits to optimize switching speed and minimize losses.

Part Context

This part belongs to Toshiba's silicon N-channel MOSFET lineup utilizing π-MOSV technology. It is engineered specifically for power conversion efficiency in general-purpose electronic equipment. The device represents a balance between conduction losses and switching performance suitable for standard frequency switching regulators.

Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Ensure any replacement matches the 450 V rating, 10 A current capacity, and compatible pinout configuration without altering the circuit design requirements.