2SK3320-BL(TE85L,F

$0.94

Description：JFET N-CH USV
Series：-

SKU:21ee9f620fde Category: JFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：JFET N-CH USV
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：6 mA @ 10 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：200 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds：13pF @ 10V
Resistance - RDS(On)：-
Power - Max：200 mW
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：5-TSSOP, SC-70-5, SOT-353
Supplier Device Package：USV
Grade：-
Qualification：-

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2SK3320-BL(TE85L,F

Overview

The Toshiba 2SK3320-BL(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for low noise audio amplifier applications. It features an ultra super mini five-pin package containing two devices. The BL suffix indicates a drain current classification of 6.0 to 14.0 mA. Key electrical characteristics include a high forward transfer admittance of 15 mS typical, a gate-drain breakdown voltage of -50 V, and a super low noise figure of 1.0 dB at 1 kHz. The device offers high input impedance with a maximum gate-source cut-off current of -1 nA.

Feature Summary

Dual JFET configuration housed in an ultra super mini five-pin package
Optimized for low noise performance in audio amplifier circuits
High forward transfer admittance for effective signal amplification
Super low noise figure suitable for sensitive pre-amplifier stages

Applications

First stages of equalizer amplifiers
Microphone cartridge head amplifiers
Low noise audio pre-amplifiers

Procurement Notes

Verify the specific ordering suffix matches the required drain current classification, as the BL designation corresponds to a defined IDSS range. Confirm the package type and pin assignment align with the design schematic. Ensure compliance with environmental directives such as RoHS before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring minimal noise contribution from the initial amplification stage. The dual configuration allows for balanced differential inputs within a compact footprint. Consider the absolute maximum ratings for thermal management and ensure the operating conditions remain within the specified junction temperature limits.

Part Context

This part belongs to Toshiba's lineup of silicon N-channel junction field-effect transistors specifically engineered for analog signal processing. The 2SK3320 series provides matched pairs in a single package to facilitate precise circuit balancing. It serves as a specialized alternative to discrete JFETs where size constraints and noise performance are critical design factors.

Replacement Considerations

Direct replacements must match the five-pin package outline and electrical parameters. Verify that substitute components offer comparable noise figures and forward transfer admittance to maintain circuit performance integrity.