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Product Detailed Parameters
- Description：MOSFET N-CH 250V 4.5A PW-MOLD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：440 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PW-MOLD
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Toshiba Semiconductor and Storage 2SK3342 is a silicon N-channel MOSFET utilizing π-MOSV technology, designed for switching regulators, DC-DC converters, and motor drives. It features a drain-source voltage of 250 V and a continuous drain current of 4.5 A at 25°C case temperature. The device exhibits a typical drain-source ON resistance of 0.8 Ω and a forward transfer admittance of 4.5 S. Gate threshold voltage ranges from 1.5 to 3.5 V. It operates with a maximum channel temperature of 150°C and supports repetitive avalanche energy of 2.0 mJ.
Feature Summary
- Utilizes π-MOSV technology for enhanced performance in power switching applications
- Features low drain-source ON resistance to minimize conduction losses
- Supports high forward transfer admittance for efficient gate drive control
- Capable of handling repetitive avalanche energy for robust operation
Applications
- Switching regulator circuits
- DC-DC converter designs
- Motor drive systems
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package dimensions and marking details match the required JEDEC or Toshiba standards. Ensure thermal management design accounts for the specified thermal resistance values to maintain safe operating temperatures under load conditions.
Selection Notes
Select this component when designing circuits requiring a 250 V N-channel MOSFET with moderate current handling capabilities. Consider the 0.8 Ω ON resistance for efficiency requirements and the 4.5 A continuous current rating for load matching. Evaluate the gate threshold voltage range to ensure compatibility with available logic level drivers or gate drive voltages.
Part Context
This part belongs to the family of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is specifically engineered using π-MOSV technology to optimize switching characteristics and on-resistance. The device is intended for general electronics applications, including industrial and consumer equipment, where reliable power switching is required.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers. Verify that any replacement matches the 250 V drain-source voltage, 4.5 A current rating, and compatible pinout configuration.
