2SK3353-AZ

2SK3353-AZ

$2.78
  • Description:2SK3353 - N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:640d936ef85b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SK3353 - N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:9.5mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4650 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta), 95W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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2SK3353-AZ

Overview

The Renesas 2SK3353-AZ is a single N-channel enhancement mode MOSFET in a TO-220AB package. It features a drain-source breakdown voltage of 60V and a continuous drain current of 82A at case temperature. The device has a maximum power dissipation of 95W at case temperature and 1.5W at ambient temperature. It operates up to a junction temperature of 150°C with a typical on-resistance of 9.5mΩ.

Feature Summary

  • N-channel silicon MOSFET designed for high-current switching applications
  • Low on-resistance for efficient power handling
  • Enhancement mode operation for standard gate drive compatibility

Applications

  • Industrial motor control systems
  • High-current DC-DC converter circuits
  • Power supply output stages

Procurement Notes

Verify the specific suffix -AZ against the official Renesas datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status as required by your assembly process. Check for obsolescence notices directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 60V rating and 82A current capacity are required in a through-hole TO-220AB package. Ensure the application can provide adequate heatsinking to manage the 95W power dissipation limit at case temperature. Verify gate drive requirements align with the device's threshold voltage specifications.

Part Context

This part belongs to the Renesas 2SK3353 series of N-channel power MOSFETs. The -AZ suffix typically denotes lead-free and RoHS-compliant packaging variants within the product line. It serves as a discrete semiconductor solution for replacing older generation transistors in legacy industrial designs requiring robust current handling.

Replacement Considerations

Consult the official Renesas replacement guide for verified substitutes. Do not assume direct pin-to-pin compatibility with other brands without verifying electrical parameters and thermal resistance values.

2SK3353-AZ2SK3353-AZ
$2.78
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