2SK3372GRL

2SK3372GRL

$0.12
  • Description:JFET N-CH 2MA SSSMINI3-F2
  • Series:-

SKU:109e734fa76e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:JFET N-CH 2MA SSSMINI3-F2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):20 V
  • Current - Drain (Idss) @ Vds (Vgs=0):107 µA @ 2 V
  • Current Drain (Id) - Max:2 mA
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:-20°C ~ 80°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F2
  • Grade:-
  • Qualification:-

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2SK3372GRL

Overview

The Panasonic 2SK3372GRL is a silicon N-channel junction field-effect transistor (JFET) designed for low-frequency impedance conversion and electret capacitor microphone applications. It operates within an ambient temperature range of -20°C to +80°C and features a maximum power dissipation of 100 mW. The device utilizes the SSSMini3-F2 surface-mount package with pin configurations for Drain, Source, and Gate. Key electrical characteristics include a drain-source voltage rating of 20 V, a drain current limit of 2 mA, and a mutual conductance ranging from 660 µS to 1,600 µS at 1 kHz.

Feature Summary

  • High mutual conductance suitable for signal amplification
  • Low noise voltage performance for sensitive audio circuits
  • Optimized for low-frequency impedance conversion tasks

Applications

  • Impedance conversion in low frequency circuits
  • Electret capacitor microphone pre-amplifiers

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Review the manufacturer's lifecycle status page for current availability and obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when low noise voltage and high mutual conductance are required for small-signal processing. Ensure the design accommodates the specified 20 V drain-source voltage limit and 100 mW power dissipation constraints under expected operating temperatures.

Part Context

This part belongs to the Panasonic Silicon Junction FETs series, specifically categorized as a small-signal device. It is engineered for general electronic equipment applications such as office equipment, communications gear, and measuring instruments, adhering to standard industrial semiconductor specifications.

Replacement Considerations

Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume direct compatibility with other N-channel JFETs without verifying pinout alignment and electrical parameter limits against the original datasheet requirements.

FAQ

What is the typical mutual conductance range for this device?

The mutual conductance typically ranges from 660 µS to 1,600 µS when measured at a drain voltage of 2.0 V and a frequency of 1 kHz.

How is the SSSMini3-F2 package configured?

Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.

Is this component compliant with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

2SK3372GRL2SK3372GRL
$0.12
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