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The Panasonic 2SK3372GSL is a silicon N-channel junction FET designed for low-frequency impedance conversion and electret capacitor microphone applications. It operates within an ambient temperature range of -20°C to +80°C and features a maximum power dissipation of 100 mW. The device provides a drain-source voltage rating of 20 V and a drain current capacity up to 2 mA. Key electrical characteristics include a mutual conductance ranging from 660 µS to 1,600 µS at 1 kHz, and a noise voltage as low as 4 µV under specified conditions.
Verify the specific ordering suffix against official Panasonic documentation to confirm package type and tape-and-reel specifications. Confirm lifecycle status, as this component may be subject to maintenance or discontinuation schedules. Ensure compliance with RoHS directives if required by your manufacturing standards.
Select this component when low noise voltage and high mutual conductance are critical for small-signal processing. Verify that the 20 V drain-source voltage and 100 mW power dissipation limits align with your circuit's operating conditions. Consider the SSSMini3-F2 package dimensions for PCB layout constraints.
This part belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It is specifically engineered for analog signal handling where low distortion and minimal noise introduction are necessary. The device complements other small-signal transistors in audio and sensor interface designs.
No official substitute part numbers are listed in the provided datasheet. When evaluating alternatives, match the N-channel JFET technology, 20 V VDS rating, and SSSMini3-F2 package. Verify that replacement devices offer comparable mutual conductance and noise voltage specifications.
The mutual conductance ranges from 660 µS to 1,600 µS at a drain voltage of 2.0 V and a frequency of 1 kHz.
No, it is specifically designed for impedance conversion in low frequency applications.
The maximum power dissipation is 100 mW at an ambient temperature of 25°C.