2SK3377(0)-Z-E1-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:481b4763c5a9 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3377(0)-Z-E1-AZ

Overview

The 2SK3377(0)-Z-E1-AZ is an N-Channel Power MOSFET designed for high current switching applications. It features a maximum drain-to-source voltage of 60 V and a continuous DC drain current of ±20 A at 25°C. The device exhibits low on-state resistance, with RDS(on)1 max 44 mΩ at VGS=10V and RDS(on)2 max 78 mΩ at VGS=4.0V. Input capacitance is typically 760 pF. It includes a built-in gate protection diode and body diode with reverse recovery time of 39 ns. Available in TO-251 or TO-252 packages.

Feature Summary

Low on-state resistance for efficient power handling
Built-in gate protection diode for ESD safety
High current switching capability up to 20A

Applications

High current switching circuits
Power management systems
Industrial motor control

Procurement Notes

Verify component authenticity through authorized Renesas channels due to legacy status. Confirm package variant (TO-251 vs TO-252) matches design requirements. Check latest datasheet revisions for parameter updates. Ensure compliance with export control regulations if applicable. Validate quality grade suitability for the intended application environment before procurement.

Selection Notes

Select based on required voltage rating and thermal dissipation needs. Consider gate drive voltage compatibility for optimal RDS(on). Evaluate package thermal resistance for heat sinking requirements. Verify avalanche energy ratings if inductive loads are present. Compare input capacitance against switching frequency demands.

Part Context

This component belongs to the 2SK3377 series of N-Channel MOSFETs originally developed by NEC Electronics Corporation, now part of Renesas Electronics following the 2010 merger. The series targets robust power switching solutions requiring low conduction losses and reliable operation under high current conditions.

Replacement Considerations

Publicly confirmed substitute part numbers include IPD26N06S2L35ATMA2, IPD350N06LGBTMA1, and NVD5414NT4G-VF01. Verify pinout compatibility and electrical parameters before substitution.