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The 2SK3404-Z-E1-AZ is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of 30 V and a continuous drain current rating of 40 A. The device exhibits a maximum on-resistance of 0.021 Ω. It is housed in a TO-263AB (D2PAK) package with three terminals, where the case is connected to the drain. The component operates in enhancement mode and includes a built-in diode configuration.
Verify the specific suffix -E1-AZ against official Renesas documentation to confirm compliance status and packaging details. Ensure the ordering code matches the exact electrical specifications required for the design. Cross-reference the manufacturer's latest datasheet to validate pinout and thermal characteristics before finalizing procurement.
Select this component for applications requiring high current handling at low voltage levels. The 30 V rating suits 24 V systems. The low on-resistance minimizes conduction losses. Verify that the TO-263AB package fits the thermal and spatial constraints of the target PCB layout. Confirm compatibility with drive voltages for full enhancement.
This part belongs to the Renesas 2SK3404 series of power MOSFETs. The series is designed for general-purpose power switching applications. The Z suffix typically indicates RoHS compliance. The E1-AZ suffix denotes specific environmental and packaging attributes defined by the manufacturer. This family targets cost-effective solutions for industrial and consumer power electronics.
Check for direct substitutes within the Renesas portfolio sharing identical pinouts and electrical ratings. Verify that any alternative component meets the 40 A current and 30 V voltage requirements. Ensure thermal performance and package dimensions are compatible with existing designs.