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Product Detailed Parameters
- Description：MOSFET N-CH 40V 80A TO220AB
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 84W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The 2SK3430-AZ is an N-channel power MOSFET designed for industrial use. It features a low on-state resistance of 7.3 mΩ maximum at VGS = 10 V and ID = 40 A, or 15 mΩ maximum at VGS = 4 V and ID = 40 A. The device has a typical input capacitance (Ciss) of 2800 pF. It is available in TO-220AB, TO-262, and TO-220SMD packages. The TO-220AB variant includes a built-in gate protection diode.
Feature Summary
- Super low on-state resistance optimized for high current switching applications
- Built-in gate protection diode included in the TO-220AB package configuration
Applications
- High current industrial switching applications
Procurement Notes
Verify the specific package suffix required for your design, as the base part number corresponds to multiple physical packages including TO-220AB, TO-262, and TO-220SMD. Confirm that the selected variant meets your thermal management requirements and that any necessary gate protection components are accounted for if using packages without the integrated diode.
Selection Notes
Select this component for circuits requiring robust N-channel switching with minimal conduction losses. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on). Consider the thermal dissipation capabilities of the chosen package style relative to the expected load current and ambient operating conditions.
Part Context
This component belongs to Renesas Electronics' discrete semiconductor transistor lineup, specifically within the power MOSFET category. It is manufactured under the legacy NEC Electronics brand heritage, which was fully integrated into Renesas Technology Corporation and subsequently Renesas Electronics Corporation.
