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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3432-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching applications in industrial and consumer electronics. The device features a TO-251 (IPAK) surface-mount package with three leads. It operates with a maximum drain-source voltage of 100V and supports continuous drain current capabilities suitable for general-purpose power switching tasks. The component is lead-free and RoHS compliant, ensuring adherence to environmental standards.
Feature Summary
- N-channel power MOSFET configuration for efficient switching
- RoHS compliant and lead-free construction
- TO-251 surface-mount packaging for compact integration
Applications
- Industrial control systems
- Consumer electronic devices
- General-purpose power switching circuits
Procurement Notes
Verify the specific suffix variant when ordering, as designations such as -S-AZ or -AZ may indicate differences in packaging or revision status. Confirm that the required quantity matches the manufacturer's standard carrier type, typically bulk bags for this component series. Ensure compatibility with existing PCB footprints designated for TO-251 packages before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring a robust N-channel MOSFET with a 100V rating. Consider the thermal performance characteristics inherent to the TO-251 package when designing heat dissipation strategies. Evaluate the gate charge and drive requirements against the available control circuitry to ensure optimal switching efficiency and minimal power loss during operation.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power MOSFET category. It serves as a fundamental building block for power management and signal switching in various electronic assemblies. The product line emphasizes reliability and compliance with international environmental regulations for global deployment.
Replacement Considerations
Cross-reference with other 100V N-channel MOSFETs in the TO-251 package if availability is constrained. Verify pinout compatibility and electrical parameter overlaps, particularly regarding on-resistance and threshold voltage, to ensure functional equivalence without redesigning the host circuit board.
